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  Datasheet File OCR Text:
  ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25  c to 150  c 900 v v dgr t j = 25  c to 150  c; r gs = 1 m  900 v v gs continuous  20 v v gsm transient  30 v i d25 t c = 25  c24a i dm t c = 25  c, pulse width limited by t jm 96 a i ar t c = 25  c24a e ar t c = 25  c60mj e as t c = 25  c 2.5 j dv/dt i s  i dm , di/dt  100 a/  s, v dd  v dss 5 v/ns t j  150  c, r g = 2  p d t c = 25  c 500 w t j -55 ... +150  c t jm 150  c t stg -55 ... +150  c t l 1.6 mm (0.063 in.) from case for 10 s 300  c m d mounting torque to-264 0.4/6 nm/lb.in. weight plus 247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25  c, unless otherwise specified) min. typ. max.       
           
  i gss v gs =  20 v, v ds = 0  100 na i dss v ds = v dss 100  a v gs = 0 v t j = 125  c 2 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 0.45  note 1 98679b (08/00) plus 247 tm (ixfx) g d (tab)     
 s g d (tab) to-264 aa (ixfk) hiperfet tm power mosfets q-class single mosfet die 
        low qg,    low t rr    !"  #$$  %! & '&  #$ ($ ( )$ $!'&    $ #*&$  %!+   +)   #   $!'& ,-.   / &#0$ -%   ( )  1 2  $$) applications  dc-dc converters  battery chargers  switched-mode and resonant-mode power supplies  dc choppers  ac motor control  temperature and lighting controls advantages  plus 247 tm package for clip or spring mounting  space savings  high power density ixfk 24n90q v dss = 900 v ixfx 24n90q i d25 = 24a r ds(on) = 0.45  t rr  250 ns 

ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025  


   



   symbol test conditions characteristic values (t j = 25  c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5  i d25 note 1 16 22 s c iss 5900 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 650 pf c rss 130 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5  v dss , i d = 0.5  i d25 21 ns t d(off) r g = 1  (external), 60 n s t f 12 ns q g(on) 170 nc q gs v gs = 10 v, v ds = 0.5  v dss , i d = 0.5  i d25 38 nc q gd 75 nc r thjc 0.26 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25  c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 24 a i sm repetitive; 96 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr 250 ns q rm 1.4  c i rm 9a i f = i s ,-di/dt = 100 a/  s, v r = 100 v dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm outline note: 1. pulse test, t  300  s, duty cycle d  2 % ixfk 24n90q ixfx 24n90q to-264 aa outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.


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